fdmc86102lz.pdf datasheet:

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD protection level > 6 KV typical (Note 4) resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. 100% UIL Tested RoHS CompliantApplication DC - DC SwitchingBottomTopPin 154 GDGSSSD 6 S3D S72DDDSD8 1DMLP 3.3x3.3MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 100 VVGS Gate to Source Voltage 20 VDrain Current -