fdmc86248.pdf datasheet:

September 2012FDMC86248N-Channel Power Trench MOSFET 150 V, 13 A, 90 mFeatures General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 Abeen especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance.and high efficiency 100% UIL TestedApplications RoHS Compliant Primary MOSFET MV synchronous rectifierBottomTopPin 1SS DSSG SDSDDDD GDDPower 33MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 150 VVGS Gate to Source Voltage 20 VDrain Current -Continuous TC = 25 C 13ID -Continu