fdms3610s.pdf datasheet:

December 2011FDMS3610SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousQ2: N-ChannelSyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Aefficiency. Max rDS(on) = 2.2 m at VGS = 4.5 V, ID = 27 AApplications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communicationsinductance and reduced switch node