fdms86500dc.pdf datasheet:

July 2013FDMS86500DCN-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at VGS = 8 V, ID = 24 A technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely High performance technology for extremely low rDS(on)low Junction-to-Ambient thermal resistance. 100% UIL TestedApplications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side DDSDDDS DSPin 1GDSSSPin 1SDGTop