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fdms86500l.pdf datasheet:

fdms86500lfdms86500l

March 2011FDMS86500LN-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 Aringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body and high efficiencydiode reverse recovery performance. Next generation enhanced body diode technology,engineered for soft recoveryApplications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load SwitchBottom TopPin 1SGD 5 4 S

 

Keywords - ALL TRANSISTORS DATASHEET

 fdms86500l.pdf Design, MOSFET, Power

 fdms86500l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms86500l.pdf Database, Innovation, IC, Electricity

 

 
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