fdms86540.pdf datasheet:

October 2014FDMS86540N-Channel PowerTrench MOSFET60 V, 50 A, 3.4 mFeatures General Description Max rDS(on) = 3.4 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 8 V, ID = 18.5 Aringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body and high efficiencydiode reverse recovery performance. Next generation enhanced body diode technology,engineered for soft recoveryApplications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load SwitchBottom TopPin 1SDSSSD