fdms86550.pdf datasheet:

April 2014FDMS86550N-Channel PowerTrench MOSFET60 V, 155 A, 1.65 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 Abeen especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance.and high efficiency MSL1 robust package designApplications 100% UIL tested Primary DC-DC MOSFET RoHS Compliant Secondary Synchronous Rectifier Load SwitchBottom TopPin 1S SDSPin 1SGDSDSDDDDGDPower 56MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 60 VVGS Gate to Source Voltage