fdms86550et60.pdf datasheet:

January 2015FDMS86550ET60N-Channel PowerTrench MOSFET60 V, 245 A, 1.65 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 Abeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiencyApplications MSL1 robust package design Primary DC-DC MOSFET 100% UIL tested Secondary Synchronous Rectifier RoHS Compliant Load SwitchBottom TopPin 1S SDSPin 1SGDSDSDDDDGDPower 56MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings UnitsVDS Drain to Source Vo