fqa13n50c f109.pdf datasheet:

December 2013FQA13N50C_F109N-Channel QFET MOSFET500 V, 13.5 A, 480 mDescription FeaturesThese N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.75 Aplanar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC)has been especially tailored to minimize on-state resistance, provide superior switching performance, and Low Crss (Typ. 20 pF)withstand high energy pulse in the avalanche and 100% Avalanche Testedcommutation mode. These devices are well suited for high efficiency switched mode power supplies, active power Improved dv/dt Capabilityfactor correction, electronic lamp ballasts based on half bridge topology.DGGDTO-3PNSSAbsolute Maximum Ratings TC = 25C unless otherwis