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fqd12p10tm f085.pdf datasheet:

fqd12p10tm_f085fqd12p10tm_f085

February 2010tmFQD12P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well Qualified to AEC Q101suited for low voltage applications such as audio amplifier, RoHS Complianthigh efficiency switching DC/DC converters, and DC motorcontrol.DDGG S D-PAKSAbsolute Maximum Ratings TC = 25C unless

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd12p10tm f085.pdf Design, MOSFET, Power

 fqd12p10tm f085.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd12p10tm f085.pdf Database, Innovation, IC, Electricity

 

 
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