fqd5n15.pdf datasheet:

November 2013FQD5N15N-Channel QFET MOSFET150 V, 4.3 A, 800 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.3 A, 150 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 2.15 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 5.4 nC)MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 7.5 pF)switching performance and high avalanche energy 100% Avalanche Testedstrength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.DDGGSD-PAKSoAbsolute Maximum Ratings TC = 25 C unless otherwise noted.SymboI Parameter FQD5N15TM UnitVDSSDrain-Source Voltage 150 VIDDrain Current - C