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fqd5n15tf fqd5n15tm.pdf datasheet:

fqd5n15tf_fqd5n15tmfqd5n15tf_fqd5n15tm

October 2008QFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for low voltage applications such as audio amplifire,high efficiency switching for DC/DC converters, and DCmotor control, uninterrupted power supply.DD G D-PAK I-PAKGSFQD Series G FQU Serie

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd5n15tf fqd5n15tm.pdf Design, MOSFET, Power

 fqd5n15tf fqd5n15tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd5n15tf fqd5n15tm.pdf Database, Innovation, IC, Electricity

 

 
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