fqpf4n90.pdf datasheet:

October 2001TMQFETFQPF4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.DG TO-220FG D SIRFS SeriesSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQPF4N90 UnitsVDSSDrain-Source Voltage 900 VIDDrain Current