fqpf9n30.pdf datasheet:

May 2000TMQFETQFETQFETQFETFQPF9N30300V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.0A, 300V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply.DG G DS TO-220FSFQPF SeriesAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQPF9N30 UnitsVDSSDrain-Source