fqs4900.pdf datasheet:

August 2000TMQFETQFETQFETQFETFQS4900Dual N & P-Channel, Logic Level MOSFETGeneral Description FeaturesThese dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 Vfield effect transistors are produced using Fairchilds RDS(on) = 0.65 @ VGS = 5 Vproprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) = 15.5 @ VGS = -10 VThis advanced technology has been especially tailored to RDS(on) = 16 @ VGS =- 5 Vminimize on-state resistance, provide superior switching Low gate charge ( typical N-Channel 1.6 nC)performance, and withstand high energy pulse in the ( typical P-Channel 3.6 nC)avalanche and commutation mode. This device is well Fast switchingsuited for high interface in telephone sets. Improved dv/dt capability5 4D26 3D2D1G2D1 S2G17 2S18 1