fqu1n80.pdf datasheet:

January 2014FQD1N80 / FQU1N80N-Channel QFET MOSFET800 V, 1.0 A, 20 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.0 A, 800 V, RDS(on) = 20 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 0.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC)technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 2.7 pF)and high avalanche energy strength. These devices are 100% Avalanche Testedsuitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.DDGS I-PAKD-PAKGGDSSAbsolute Maximum Ratings TC = 25C unless otherwise noted.Symbol Parameter FQD1N80TM / FQU1N80TU UnitVDSSDrain-Source Voltage 800 V