frm9230.pdf datasheet:

FRM9230D, FRM9230R,FRM9230H4A, -200V, 1.30 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 4A, -200V, RDS(on) = 1.30TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si) Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically- Survives 2E12 Typically If Current Limited to IDM Photo Current - 3nA Per-RAD(Si)/sec Typically Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2- Usable to 1E14 Neutrons/cm2DescriptionSymbolThe Harris Semiconductor Sector has designed a series of SECOND GENERA-TION hardened power MOSFETs of both N and P channel enhancement typeswith ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m