ftk40n10d.pdf datasheet:

SEMICONDUCTORFTK40N10DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION DIM MILLIMETERSThis advanced high voltage MOSFET is designed to stand high A 6 50 0 2B 5 60 0 2C 5 20 0 2energy in the avalanche mode and switch efficiently. D 1 50 0 2E 2 70 0 2F 2 30 0 1This new high energy device also offers a drainHH 1 00 MAXI 2 30 0 2LF FJ 0 5 0 1Desighed for high voltage, high speed power supplies , L 0 50 0 101 2 3O 1 6 0 2Q 0 95 MAX converters, power motor controls and bridge circuits1 GATEpower supplies2 DRAINFEATURE 3 SOURCE High density cell design for ultra low Rdson Fully characterized avalanche voltage and current D-PAK (TO-252) Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capabili