ftk40p04d.pdf datasheet:

SEMICONDUCTORFTK40P04DTECHNICAL DATAFTK40P04 P-Channel Power MOSFET AIDESCRIPTION CJThe FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAXI 2 30 0 2LF FJ 0 5 0 1FEATURES 1 2 3 10 L 0 50 0O 1 6 0 2 High density cell design for ultra low RDS(ON) Q 0 95 MAX1 GATE Fully characterized Avalanche voltage and current 2 DRAIN3 SOURCE Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability D-PAK (TO-252)APPLICATIONS Power switching application Uninterruptible Power Supply Hard switched and high frequency c