fw26025a1.pdf datasheet:

FW26025A1PNP POWER DARLINGTON TRANSISTOR INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 1The FW26025A1 is a silicon Epitaxial-Base PNPpower transistor in monolithic Darlington 2configuration mounted in Jedec TO-3 metal case.It is inteded for general purpose amplifier and lowTO-3frequency switching applications.INTERNAL SCHEMATIC DIAGRAMR Typ. = 8 K R Typ. = 60 1 2ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Base Voltage (I = 0) 100 VCBO EVCEO Collector-Emitter Voltage (IB = 0) 100 VVEBO Emitter-Base Voltage (IC = 0) 5 VIC Collector Current 20 AI Collector Peak Current 40 ACMIB Base Current 0.5 APtot Total Dissipation at Tc 25 oC 160 WoT Storage Temperature -65 to 200 CstgoTj Max. Operating Junction Temperature 200 C1/4