gb100da60up.pdf datasheet:

GB100DA60UPVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient Square RBSOA HEXFRED antiparallel diodes with ultrasoftreverse recovery Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 2002/95/ECPRODUCT SUMMARY BENEFITSVCES 600 V Designed for increased operating efficiency in powerconversion: UPS, SMPS, welding, induction heatingIC DC 100 A at 61 C Easy to assemble and parallelVCE(on) typical at 100 A, 25 C 2.4 V Direct mounting to heatsinkIF DC 100 A at 85 C Plug-in compatible with other SOT-227 packages Higher switching frequency up to 150 kHz Lower conduction losses and