h8050.pdf datasheet:

SMD Type TransistorsNPN TransistorsH8050 Features1.70 0.1 Collector Power Dissipation: PC=1W Collector Current: IC=1.5A Comlementary to H85500.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 5 VCollector current IC 1.5 ACollector power dissipation PC 1 WJunction temperature Tj 150Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage VCBO IC= 100A, IE=0 40 VCollector-emitter breakdown voltage VCEO IC= 0.1mA, IB=0 25 VEmitter-base breakdown voltage VEBO IE= 100A, IC=0 5 VCollector cut-off current ICBO VCB= 40 V,IE=0 0.1 ACollector cut-off current ICE