hat2049t.pdf datasheet:

HAT2049TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-723 (Z)1st. EditionFebruary 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP8568741231 5 8D D D4G1, 5, 8 Drain2, 3, 6, 7 Source4 GateS S S S2 3 76HAT2049TAbsolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source voltage VGSS 12 VDrain current ID 8ADrain peak current ID(pulse)Note1 64 ABody-drain diode reverse drain current IDR 8AChannel dissipation Pch Note2 1.3 WChannel temperature Tch 150 CStorage temperature Tstg 55 to + 150 CNote: 1. PW 10 s, duty cycle 1 %2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10sElectrical Characteristics (Ta = 25 C)Item Symbol M