hat2052t.pdf datasheet:

HAT2052TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-724C (Z)4th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2052TAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 28 VGate to source voltage VGSS 12 VDrain current ID 5.0 ADrain peak current ID(pulse)Note1 40 ABody-drain diode reverse drain current IDR 5.0 AChannel dissipation Pch Note2 1.0 WChannel dissipation Pch Note3 1.5 WChannel temperature Tch 150 CStorage temperature Tstg 55 to + 150 CNote: 1. PW 10 s, duty cycle 1 %2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.