hat2054m.pdf datasheet:

HAT2054MSilicon N Channel Power MOS FETPower SwitchingADE-208-756B (Z)Preliminary 3rd. EditionDec. 1998Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V sourceOutlineTSOP645631 2 5 62D D D D13G4 Source3 Gate1, 2, 5, 6 DrainS4HAT2054MAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source voltage VGSS 20 VDrain current ID*2 6.3 ADrain peak current ID(pulse) *1 25.2 ABody-drain diode reverse drain current IDR*2 6.3 AChannel dissipation Pch(pulse)*2 2.0 WPch(continuous)*3 1.05 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 10 s, duty cycle 1 %2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5s,Ta=25C3. When us