hfp2n60.pdf datasheet:

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 APPLICATIONSL TO-220 High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power DissipationTc=2554W 3S VDSS Drain-Source Voltage 600V VGSS Gate-Source Voltage 30V ID Drain CurrentTc=252.0A ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVDSS Drain-Source Breakdown Voltage 600 V ID=250A ,VGS=0V IDSS Zero Gate Voltage Drain Current 10 A VDS =60

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