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hgt1s7n60c3ds hgtp7n60c3d.pdf datasheet:

hgt1s7n60c3ds_hgtp7n60c3dhgt1s7n60c3ds_hgtp7n60c3d

September 2005HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodesGeneral Description FeaturesThe HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oCHGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time...................140ns at TJ = 150oCloss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The Short Circuit RatingIGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type Low Conduction LossTA49057. Hyperfast Anti-Parallel DiodeThe IGBT is ideal for many high voltage swit

 

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 hgt1s7n60c3ds hgtp7n60c3d.pdf Design, MOSFET, Power

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