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hgtd7n60c3s hgtp7n60c3.pdf datasheet:

hgtd7n60c3s_hgtp7n60c3hgtd7n60c3s_hgtp7n60c3

HGTD7N60C3S, HGTP7N60C3Data Sheet December 200114A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oChigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower Short Circuit Ratingon-state voltage drop varies only moderately between 25oC Low Conduction Lossand 150oC.The IGBT is ideal for many high voltage switching Packagingapplications operating at moderate frequencies where low JEDEC TO-220ABconduction losses are essential, such as: AC and DC motor EMITTERCOLLECTORcontrols, power supplies and drivers

 

Keywords - ALL TRANSISTORS DATASHEET

 hgtd7n60c3s hgtp7n60c3.pdf Design, MOSFET, Power

 hgtd7n60c3s hgtp7n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hgtd7n60c3s hgtp7n60c3.pdf Database, Innovation, IC, Electricity

 

 
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