hgtg20n1.pdf datasheet:

S E M I C O N D U C T O R HGTG20N100D220A, 1000V N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 34A, 1000VEMITTER Latch Free OperationCOLLECTOR Typical Fall Time 520nsGATE High Input Impedance Low Conduction LossCOLLECTOR(BOTTOM SIDEMETAL)DescriptionThe HGTG20N100D2 is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. The device has the high input impedance of a MOS-FET and the low on-state conduction loss of a bipolar transistor.The much lower on-state voltage drop varies only moderatelyTerminal Diagrambetween +25oC and +150oC.N-CHANNEL ENHANCEMENT MODEIGBTs are ideal for many high voltage switching applicationsCoperating at frequencies where low conduction losses are essen-tial, such as: AC and DC motor controls, power supplies anddrivers for solen