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hgtg20n6.pdf datasheet:

hgtg20n6hgtg20n6

S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package 40A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oCEC Short Circuit RatedG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG20N60B3D is a MOS gated high voltage switching devicecombining the best features of MOSFETs and bipolar transistors. Thedevice has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-statevoltage drop varies only moderately between +25oC and +150oC. Thediode used in anti-parallel with the IGBT is the RHRP3060. Terminal DiagramThe IGBT is ideal for many high voltage switching applications oper-N-CHANNEL ENHANCEMENT MODEating at moderate frequencies where low con

 

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