hgtg20n60b3.pdf datasheet:

HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oChigh input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on- Short Circuit Ratedstate voltage drop varies only moderately between 25oC and Low Conduction Loss150oC. Related LiteratureThe IGBT is ideal for many high voltage switching - TB334 Guidelines for Soldering Surface Mount applications operating at moderate frequencies where low Components to PC Boardsconduction losses are essential, such as: AC and D