hgtp7n60.pdf datasheet:

HGTP7N60C3D, HGT1S7N60C3D,S E M I C O N D U C T O RHGT1S7N60C3DS14A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 14A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit RatingCOLLECTOR (FLANGE) Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionJEDEC TO-262AAThe HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DSEMITTERCOLLECTORare MOS gated high voltage switching devices combining theGATECOLLECTORbest features of MOSFETs and bipolar transistors. These(FLANGE)devices have the high input impedance of a MOSFET and thelow on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies only moderately between+25oC and +150oC. The IGBT used is devel