hgtp7n60b3d hgt1s7n60b3d.pdf datasheet:

HGTP7N60B3D, HGT1S7N60B3DSData Sheet December 200114A, 600V, UFS Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diode 14A, 600V, TC = 25oCThe HGTP7N60B3D and HGT1S7N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oCof MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state Short Circuit Ratingconduction loss of a bipolar transistor. The much lower Low Conduction Losson-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type Hyperfast Anti-Parallel DiodeTA49190. The diode used in anti-parallel with the IGBT is the PackagingRHRD660 (TA49057).JEDEC TO-220AB (ALTERNATE VERSION)