huf75329d3-s.pdf datasheet:

HUF75329D3, HUF75329D3SData Sheet December 200120A, 55V, 0.026 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 20A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, Available on the WEB at: www.fairchildsemi.comresulting in outstanding performance. This device is capable Peak Current vs Pulse Width Curveof withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored UIS Rating Curvecharge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators, - TB334, Gu