huf75344.pdf datasheet:

HUF75344G3, HUF75344P3, HUF75344S3SData Sheet January 2000 File Number 4402.775A, 55V, 0.008 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- Thermal Impedance PSPICE and SABER Modelsachieves the lowest possible on-resistance per silicon area,Available on the WEB at: www.Intersil.comresulting in outstanding performance. This device is capable Peak Current vs Pulse Width Curveof withstanding high energy in the avalanche mode and thediode exhibits very low reverse recovery time and stored UIS Rating Curvecharge. It was designed for use in applications where power Related Literatureefficiency is important, such as switching regulators,-