ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf datasheet:
IPB051NE8N G IPI05CNE8N GIPP054NE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR 5.1mDS(on),max (TO 263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21Type IPB051NE8N G IPI05CNE8N G IPP054NE8N GPackage PG-TO263-3 PG-TO262-3 PG-TO220-3Marking 051NE8N 05CNE8N 054NE8NMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 100 ADCT =100 C100CI T =25 C400Pulsed drain current3) D,pulse CEAvalanche energy, sin
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ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Design, MOSFET, Power
ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf RoHS Compliant, Service, Triacs, Semiconductor
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