ipb054n06n3.pdf datasheet:

Isc N-Channel MOSFET Transistor IPB054N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSSDrain Current-ContinuousTc=2580I AD75Tc=100I Drain Current-Single Pulsed 320 ADMP Total Dissipation @T =25 115 WD CT Max. Operating Junction Temperature 175 chStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.3/WRth(ch-a) Channel-to-ambient thermal resistance 621isc websitewww.iscsemi.cn isc & isc