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ipb054n08n3g.pdf datasheet:

ipb054n08n3gipb054n08n3g

Isc N-Channel MOSFET Transistor IPB054N08N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-Source Voltage 20 VGSSDrain Current-ContinuousTc=25I 80 ADTc=100I Drain Current-Single Pulsed 320 ADMP Total Dissipation @T =25 150 WD CT Max. Operating Junction Temperature 175 chStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websitewww.iscsemi.cn isc & iscsemi i

 

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 ipb054n08n3g.pdf Design, MOSFET, Power

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