ipb055n03l.pdf datasheet:

Type IPP055N03L GIPB055N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Type IPP055N03L G IPB055N03L GPackage PG-TO220-3-1 PG-TO263-3Marking 055N03L 055N03LMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI V =10 V, T =25 CContinuous drain current 50 AD GS CV =10 V, T =100 C50GS CV =4.5 V, T =25 C50GS CV =4.5 V,GS50T =100 CCI T =25 C350Pulsed drain current2) D,pulse C