ipb057n06n.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB057N06NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous;Tc=25I 45 ADTc=100I Drain Current-Single Pulsed 180 ADMP Total Dissipation 83 WDT Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.8/WRth(ch-a) Channel-to-ambient thermal resistanc

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