ipb057n06n.pdf datasheet:

TypeIPB057N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 5.7 mW 100% avalanche testedID 45 A Superior thermal resistanceQoss 32 nC N-channel, normal levelQg(0V..10V) 27 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 PG-TO263-3 Type Package Marking IPB057N06N PG-TO263-3 057N06N Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI V =10 V, T =25 CContinuous drain current 45 AD GS CV =10 V, T =100 C45GS CV =10 V, T =25 C, GS C17R =50K/WthJAI T =25 C180Pulsed drain current2) D,pulse CI =45 A, R =25 W 60 mJAvalanche energy, single pulse3) E AS D GSVGate source voltage 20 VGS1