ipb05n03la.pdf datasheet:

IPB05N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 4.6mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO263 Superior thermal resistance 175 C operating temperature dv /dt rated Pb-free lead plating; RoHS compliantType Package MarkingIPB05N03LA G PG-TO263 05N03LAMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 80 ADCT =100 C76CIPulsed drain current T =25 C3) 385D,pulseCEAvalanche energy, single pulse I =72 A, R =25 190 mJAS D GSI =80 A, V =20 V, D DSReverse diode dv /dt dv /d