ipb05n03lbg.pdf datasheet:

IPB05N03LBOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 5.0mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO220-3-1PG-TO263-3 Superior thermal resistance 175 C operating temperature dv /dt rated Pb-free lead plating; RoHS compliantType Package MarkingIPB05N03LB PG-TO263-3 05N03LBMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 80 ADCT =100 C72CIPulsed drain current T =25 C3) 320D,pulseCEAvalanche energy, single pulse I =80 A, R =25 136 mJAS D GSI =80 A, V =20 V, D DSReverse diode dv /dt dv /d