ipp052n08n5.pdf datasheet:

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP052N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP052N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21DrainTable 1 Key Performance ParametersPin 2, TabParameter Value UnitV 80 VDS GatePin 1R 5.2 mDS(on),maxSourcePin 3I 80 ADQ 51 nCossQ (0V..10V) 42 nCGType / Ordering Code Package Marking Related LinksIPP052N08N5 PG-TO220-3 052N08N5 -1) J-STD2