ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf datasheet:
IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationType IPP057N08N3 G IPI057N08N3 G IPB054N08N3 GPackage PG-TO220-3 PG-TO262-3 PG-TO263-3Marking 057N08N 057N08N 054N08NMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 80 ADCT =100 C80CI T =25 C320Pulsed drain current2) D,pulse CEAvalanche energy
Keywords - ALL TRANSISTORS DATASHEET
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Design, MOSFET, Power
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf RoHS Compliant, Service, Triacs, Semiconductor
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Database, Innovation, IC, Electricity



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet