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ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf datasheet:

ipp057n08n3-g_ipi057n08n3-g_ipb054n08n3-gipp057n08n3-g_ipi057n08n3-g_ipb054n08n3-g

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationType IPP057N08N3 G IPI057N08N3 G IPB054N08N3 GPackage PG-TO220-3 PG-TO262-3 PG-TO263-3Marking 057N08N 057N08N 054N08NMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 80 ADCT =100 C80CI T =25 C320Pulsed drain current2) D,pulse CEAvalanche energy

 

Keywords - ALL TRANSISTORS DATASHEET

 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Design, MOSFET, Power

 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Database, Innovation, IC, Electricity

 

 
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