ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf datasheet:
IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB100N04S4-02 PG-TO263-3-2 4N04H2IPI100N04S4-02 PG-TO262-3-1 4N04H2IPP100N04S4-02 PG-TO220-3-1 4N04H2Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25C, V =10V100 AContinuous drain current1) D C GST =100C, V =10V2) 100C GSI T =25C400Pulsed drain current2) D,pulse CI =50A280 mJAvalanche energy, single pulse2) E AS DIAvalanche current, single pulse - 100 AASV -Gate source volt
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ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Design, MOSFET, Power
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf RoHS Compliant, Service, Triacs, Semiconductor
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf Database, Innovation, IC, Electricity



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