ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf datasheet:

IPB45N04S4L-08IPI45N04S4L-08, IPP45N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 7.6mDS(on),max I 45 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N04S4L-08 PG-TO263-3-2 4N04L08IPI45N04S4L-08 PG-TO262-3-1 4N04L08IPP45N04S4L-08 PG-TO220-3-1 4N04L08Maximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25C, V =10V45 AContinuous drain current1) D C GST =100C, V =10V2) 42C GSI T =25C180Pulsed drain current2) D,pulse CI =22A55 mJAvalanche energy, single pulse2) E AS DIAvalanche current, single pulse - 45 AASV -Gate source voltag