irf7328.pdf datasheet:

PD -94000IRF7328HEXFET Power MOSFET Trench TechnologyVDSS RDS(on) max ID Ultra Low On-Resistance-30V 21m@VGS = -10V -8.0A Dual P-Channel MOSFET32m@VGS = -4.5V -6.8A Available in Tape & ReelDescription1 8New trench HEXFET Power MOSFETs from S1 D1International Rectifier utilize advanced processing2 7G1 D1techniques to achieve extremely low on-resistance3 6per silicon area. This benefit, combined with theS2 D2ruggedized device design that HEXFET power4 5G2 D2MOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for useSO-8in battery and load management applications. Top ViewAbsolute Maximum RatingsParameter Max. UnitsVDS Drain-Source Voltage -30 VID @ TA = 25C Continuous Drain Current, VGS @ -10V -8.0ID @ TA = 70C Continuous Drain Current, VGS @ -10V -6.4 AIDM Pulsed D