irfi530n.pdf datasheet:

PD - 9.1353AIRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedGID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientdevice for use in a wide variety of applications.The TO-220 Fullpak eliminates the need for additionalinsulating hardware in commercial-industrial applications.The moulding compound used provides a high isolationcapability and a low thermal resistance between the tab TO-220 FU