irfr13n20d.pdf datasheet:

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20DFEATURESStatic drain-source on-resistance:RDS(on)235mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 13 ADI Drain Current-Single Pulsed 52 ADMP Total Dissipation @T =25 110 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.4Channel-to-ambient thermal resistance/WRth(j-a) 1101isc websitewww.iscsemi.cn isc & iscsemi is registered trademark